Quantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures
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5
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2017
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NOVO. C.
BÜHLER, Rudolf Theoderich
BAPTISTA, J.
Renato Giacomini
AFZALINA, A.
FLANDRE, D.
BÜHLER, Rudolf Theoderich
BAPTISTA, J.
Renato Giacomini
AFZALINA, A.
FLANDRE, D.
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IEEE Sensors Journal
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NOVO. C.; BÜHLER, R. T.; BAPTISTA, J.; GIACOMINI, R.; AFZALINA, A.; FLANDRE, D.Quantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures. IEEE Sensors Journal, v.17, n. 6, p. 1641-1648, March, 2017.
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© 2017 IEEE.Thin-film lateral SOI p-i-n diodes can be used as photodetectors especially in the wavelength range of blue and ultra-violet (UV) radiation. Unlike vertical devices, lateral diodes can have depletion regions very close to the device surface, where the absorption of low-wavelengths radiation takes place. Due to this proximity to the surface, an MOS back-gate can control the charge density inside this region, allowing quantum efficiency improvement. This paper reports experimental results of SOI p-i-n photodetectors with different intrinsic lengths in the 300-500-K range, simultaneously considering back-gate bias and temperature influences. Indeed, the back-gate bias becomes very effective in terms of quantum efficiency control with up to 52.4% for LI =1μm at T=500 K in inversion mode, while in accumulation, the resulting efficiency was 48.2% at T=500 K for the device with LI= 10 μm at UV. These variations are related to the behavior of dark current and the recombination rate of the devices.