Asymmetric Self-Cascode versus Graded-Channel SOI nMOSFETs for analog applications
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3
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2015-10-13
Autores
ASSALTI, R.
Marcelo Antonio Pavanello
FLANDRE, D.
Michelly De Souza
Marcelo Antonio Pavanello
FLANDRE, D.
Michelly De Souza
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SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices
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ASSALTI, R.; PAVANELLO, M. A.; FLANDRE, D.; DE SOUZA, M. Asymmetric Self-Cascode versus Graded-Channel SOI nMOSFETs for analog applications. SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices. Oct. 2015.
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This paper compares the performance of Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs, both proposed to improve the analog performance of fully depleted SOI nMOSFETs. The differences at device level are evaluated and the impact of their application in basic analog circuits, i.e. common-source amplifier, source-follower and common-source current mirror are explored through experimental results.