The impact of a (Si)Ge heterojunction on the analog performance of vertical Tunnel FETs
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2014-10-05
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AGOPIAN, P. G. D.
MARTINO, J. A.
VANDOOREN, A.
ROOYACKERS, R.
SIMON, E.
THEAN, A.
CLAEYS, C.
MARTINO, J. A.
VANDOOREN, A.
ROOYACKERS, R.
SIMON, E.
THEAN, A.
CLAEYS, C.
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ECS Transactions
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AGOPIAN, P. G. D.; MARTINO, J. A.; VANDOOREN, A.; ROOYACKERS, R.; SIMON, E.; THEAN, A.; CLAEYS, C. The impact of a (Si)Ge heterojunction on the analog performance of vertical Tunnel FETs. ECS Transactions, v. 64, n. 11, p. 127-133, Nov. 2014.
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© The Electrochemical Society.This work studies the impact of the germanium content in the source on analog parameters of vertical nanowire Tunnel-FETs (NW-TFETs) operating in a temperature range from room temperature to 150°C. Although, the higher the germanium amount in the source the higher the on-state current, with respect to the analog applications the NW-TFETs performance depends mainly on the predominant conduction mechanism. At room temperature, TFETs for which BTBT is the predominant transport mechanism, present better analog performance, while at high temperature the device that is more trap-assisted-tunneling dependent presents the best performance due to its higher immunity to the drain electric field.