Standard MOS Diodes Composed by SOI UTBB Transistors
Nenhuma Miniatura disponível
Citações na Scopus
0
Tipo de produção
Artigo de evento
Data
2022-08-05
Autores
COSTA, F. J.
TREVISOLI, R.
CAPOVILLA, C. E.
Rodrigo Doria
TREVISOLI, R.
CAPOVILLA, C. E.
Rodrigo Doria
Orientador
Periódico
36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings
Título da Revista
ISSN da Revista
Título de Volume
Citação
COSTA, F. J.; TREVISOLI, R.; CAPOVILLA, C. E.; DORIA, R. Standard MOS Diodes Composed by SOI UTBB Transistors. 36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings, aug. 2022.
Texto completo (DOI)
Palavras-chave
Resumo
© 2022 IEEE.The main objective of this work is to present an analysis of the performance of UTBB SOI transistors working as standard diodes, where the implementation of ground planes and substrate bias are analyzed. It is shown a reduced leakage current and increased ratio between the on and off-state currents with the substrate bias at -2 V and with a P-type GP implemented. However, both conditions result in increased threshold voltage.