Analysis of Fin Width Influence on the Carrier's Mobility of Nanowire MOSFETs
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2021-08-31
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CCOTO, C. U. C.
BERGAMASHI, F. E.
Marcelo Antonio Pavanello
BERGAMASHI, F. E.
Marcelo Antonio Pavanello
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SBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices
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CCOTO, C. U. C.; BERGAMASHI, F. E.; PAVANELLO, M. A.
Analysis of Fin Width Influence on the Carrier's Mobility of Nanowire MOSFETs.
SBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices, aug. 2021.
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©2021 IEEE.In this work, the study of the effective electron mobility (peff) of n-channel MOS transistor nanowires is presented. By extracting the mobility of the top and sidewall using the surface current separation technique together with the split-CV method. Analyzing the comparison of simulated TCAD results and experimental transistors fabricated with various fin widths (12nm-82nm) and how the effect of varying the fin width and applied substrate voltages interfere with carrier mobility values.