Charge-based continuous equations for the transconductance and output conductance of graded-channel SOl MOSFET's
N/D
Tipo de produção
Artigo de evento
Data de publicação
2007-01-05
Periódico
Journal of Integrated Circuits and Systems
Editor
Texto completo na Scopus
Citações na Scopus
0
Autores
Michelly De Souza
Marcelo Antonio Pavanello
Orientadores
Resumo
This paper presents charge-based continuous equations for the transconductance and output conductance of submicrometer Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFET. The effects of carrier velocity saturation, channel length modulation and drain-induced barrier lowering were taken into account in the proposed equations. Experimental results were used to test the validity of the equations by comparing not only the transconductance and the output conductance, but also the Early voltage and the open-loop voltage gain, showing a good agreement in a wide range of bias.
Citação
DE SOUZA, M.; PAVANELLO, M. A. Charge-based continuous equations for the transconductance and output conductance of graded-channel SOl MOSFET's. Journal of Integrated Circuits and Systems, v. 2, n. 2, p. 104-110, 2007.
Palavras-chave
Keywords
Device modeling; Graded-channel; Output conductance; SOI MOSFET; Transconductance