Repositório do Conhecimento Institucional do Centro Universitário FEI
 

Charge-based continuous equations for the transconductance and output conductance of graded-channel SOl MOSFET's

N/D

Tipo de produção

Artigo de evento

Data de publicação

2007-01-05

Periódico

Journal of Integrated Circuits and Systems

Editor

Citações na Scopus

0

Autores

Michelly De Souza
Marcelo Antonio Pavanello

Orientadores

Resumo

This paper presents charge-based continuous equations for the transconductance and output conductance of submicrometer Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFET. The effects of carrier velocity saturation, channel length modulation and drain-induced barrier lowering were taken into account in the proposed equations. Experimental results were used to test the validity of the equations by comparing not only the transconductance and the output conductance, but also the Early voltage and the open-loop voltage gain, showing a good agreement in a wide range of bias.

Citação

DE SOUZA, M.; PAVANELLO, M. A. Charge-based continuous equations for the transconductance and output conductance of graded-channel SOl MOSFET's. Journal of Integrated Circuits and Systems, v. 2, n. 2, p. 104-110, 2007.

Palavras-chave

Keywords

Device modeling; Graded-channel; Output conductance; SOI MOSFET; Transconductance

Assuntos Scopus

Avaliação

Revisão

Suplementado Por

Referenciado Por