Charge-based continuous equations for the transconductance and output conductance of graded-channel SOl MOSFET's
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2007-01-05
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Michelly De Souza
Marcelo Antonio Pavanello
Marcelo Antonio Pavanello
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Journal of Integrated Circuits and Systems
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DE SOUZA, M.; PAVANELLO, M. A. Charge-based continuous equations for the transconductance and output conductance of graded-channel SOl MOSFET's. Journal of Integrated Circuits and Systems, v. 2, n. 2, p. 104-110, 2007.
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This paper presents charge-based continuous equations for the transconductance and output conductance of submicrometer Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFET. The effects of carrier velocity saturation, channel length modulation and drain-induced barrier lowering were taken into account in the proposed equations. Experimental results were used to test the validity of the equations by comparing not only the transconductance and the output conductance, but also the Early voltage and the open-loop voltage gain, showing a good agreement in a wide range of bias.