Influência das dimensões geométricas no comportamento da corrente de fuga em dispositivos SOI nMOSFETs de múltiplas portas em altas temperaturas
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Dissertação
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2010
Autores
Giroldo Jr, J.
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Bellodi, Marcello
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GIROLDO JR, J. Influência das dimensões geométricas no comportamento da corrente de fuga em dispositivos SOI nMOSFETs de múltiplas portas em altas temperaturas. 2010. 108 f. Dissertação (Mestrado em Engenharia Elétrica) - Centro Universitário da Fei, São Bernardo do Campo, 2010 Disponível em: . Acesso em: 16 jun. 2010.
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Transistor de efeito de campo de metal-óxido semicondutor
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Neste trabalho foi avaliado o comportamento da corrente de fuga do dreno (IDLeak) em
transistores de multiplas portas (MuGFET) canal N na tecnologia de Silicio sobre Isolante
(SOI), operando desde a temperatura ambiente (27 C) ate 300C. Foram realizadas simulacoes numericas tridimensionais em dispositivos de duas, tres e quatro portas , com o objetivo de investigar o comportamento de IDLeak, a sua composicao de portadores (eletrons e lacunas), e a sua distribuicao pelo filme de silicio que compoe a regiao do canal dos dispositivos. Alem da variacao de temperatura, tambem foi avaliado o comportamento destes dispositivos com relacao a variacao de suas dimensoes geometricas, sendo que o comprimento de canal (L) foi variado desde 100 nm ate 1 Êm, a largura do
dispositivo (WFIN) e a altura (HFIN) assumiram valores entre 30 e 240 nm. Com os resultados destas simulacoes foram levantadas as curvas caracteristicas da corrente de dreno (IDS) em funcao da tensao de porta (VGS), o que permitiu a extracao de IDLeak. Tambem foram realizados estudos na estrutura de cada um dos dispositivos polarizados na regiao de corte, onde foram extraidas as densidades (eletrons, lacunas e total) de IDLeak. Como esperado, foi observado que IDLeak e fortemente dependente da variacao da temperatura e da area das juncoes (fonte-canal e dreno-canal), assumindo valores entre 10-20A e 10-10A com o aumento da area das juncoes e conforme a temperatura e elevada. Tambem foi
observado que IDLeak assume valores entre 10-10A e 10-6A com a reducao de L, independente
da estrutura analisada. Em todos os dispositivos avaliados foi verificado que IDLeak e majoritariamente
composta por eletrons e que circula principalmente na regiao mediana do filme de silicio que compoe o canal do dispositivo. Comparando os dispositivos de duas, tres e quatro portas quando operam nas mesmas condicoes de polarizacao e na mesma faixa de temperatura, foi notado que IDLeak assume menores valores em dispositivos com maior numero de portas.
In this study was evaluated the drain leakage current (IDLeak) behavior on N-channel multiple gate transistors (MuGFET) in Silicon on Insulator (SOI) technology operating from room temperature (27 °C) up to 300 °C. Numerical three-dimensional simulations were performed in double-gate, triple-gate and quadruple-gate devices, in order to investigate the IDLeak behavior, the composition of carriers (electrons and holes) and its distribution through the silicon film in the channel region. In addition to a function of the temperature variation, it was also analyzed the behavior of these devices in relation to changes in geometrical dimensions, and the channel length (L) was changed from 100 nm up to 1ìm, the width (WFIN) and height (HFIN) of the devices was ranged values of 30 up to 240nm. Through the results of these simulations, the characteristic curves of drain current (IDS) was raised as a function of gate voltage (VGS), which allowed the extraction of IDLeak, and it was also carried out studies on the structure of each device in the cut-off polarized region, from where it was extracted drain leakage current densities (electrons, holes and total). As expected, it was observed that IDLeak is highly dependent on temperature variation and the junction areas (source-channel and drain-channel), assuming values between 10-20A e 10-10A with increasing junction areas and according the increasing of high temperature. It was also observed that IDLeak is larger in devices with L smaller assuming values between 10-10A e 10-6A, independent of the analyzed devices structure. In all evaluated devices, it was found that IDLeak is mainly composed of electrons, which flows mainly in the middle of the silicon film. Comparing double, triple and quadruple gates devices when operating at same polarization and same temperature conditions level, it was noted that IDLeak assumes lower values for devices with more gates.
In this study was evaluated the drain leakage current (IDLeak) behavior on N-channel multiple gate transistors (MuGFET) in Silicon on Insulator (SOI) technology operating from room temperature (27 °C) up to 300 °C. Numerical three-dimensional simulations were performed in double-gate, triple-gate and quadruple-gate devices, in order to investigate the IDLeak behavior, the composition of carriers (electrons and holes) and its distribution through the silicon film in the channel region. In addition to a function of the temperature variation, it was also analyzed the behavior of these devices in relation to changes in geometrical dimensions, and the channel length (L) was changed from 100 nm up to 1ìm, the width (WFIN) and height (HFIN) of the devices was ranged values of 30 up to 240nm. Through the results of these simulations, the characteristic curves of drain current (IDS) was raised as a function of gate voltage (VGS), which allowed the extraction of IDLeak, and it was also carried out studies on the structure of each device in the cut-off polarized region, from where it was extracted drain leakage current densities (electrons, holes and total). As expected, it was observed that IDLeak is highly dependent on temperature variation and the junction areas (source-channel and drain-channel), assuming values between 10-20A e 10-10A with increasing junction areas and according the increasing of high temperature. It was also observed that IDLeak is larger in devices with L smaller assuming values between 10-10A e 10-6A, independent of the analyzed devices structure. In all evaluated devices, it was found that IDLeak is mainly composed of electrons, which flows mainly in the middle of the silicon film. Comparing double, triple and quadruple gates devices when operating at same polarization and same temperature conditions level, it was noted that IDLeak assumes lower values for devices with more gates.