Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors
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2023-10-05
Autores
SILVA, L. M. B. DA
Marcelo Antonio Pavanello
CASSÉ, M.
BARRAUD, S.
VINET, M.
FAYNOT, O.
Michelly De Souza
Marcelo Antonio Pavanello
CASSÉ, M.
BARRAUD, S.
VINET, M.
FAYNOT, O.
Michelly De Souza
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Solid-State Electronics
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SILVA, L. M. B. DA; PAVANELLO, M. A.; CASSÉ, M.; BARRAUD, S.; VINET, M.; FAYNOT, O.; DE SOUZA, M. Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors. Solid-State Electronics, v. 208, oct. 2023.
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© 2023 Elsevier LtdThis work analyzes the influence of source-drain series resistance variability over the drain current in junctionless and inversion mode nanowire transistors. A comparison between drain current and Y-function variability is presented using experimental data of nanowires with different widths and channel lengths. The source-drain series resistance variability is also presented. The results indicates that source-drain series resistance influence is higher on drain current variability for junctionless than inversion mode nanowire transistors.