Experimental Assessment of Variability in Junctionless Nanowire nMOS Transistors

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dc.contributor.authorMichelly De Souza
dc.contributor.authorBARRAUD, S.
dc.contributor.authorCASSE, M.
dc.contributor.authorVINET, M.
dc.contributor.authorFAYNOR, O.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.date.accessioned2022-03-01T06:05:19Z
dc.date.available2022-03-01T06:05:19Z
dc.date.issued2021-09-06
dc.description.abstractIn this work, experimental assessment of the variability of threshold voltage and drain current in junctionless nanowire n MOS transistors is presented. Die-to-die variability of threshold voltage and drain current is presented and compared to inversion mode nanowire with the same dimensions. Although the junctionless nanowires have shown larger threshold voltage matching coefficients than inversion mode devices, the variability obtained experimentally has shown to be smaller than predicted by some simulations reported in the literature. Also, it has been shown that as the channel length of junctionless nanowire transistors is reduced, the current variability becomes smaller than in inversion mode nanowires, at the same current level and dimensions.
dc.description.firstpage223
dc.description.lastpage226
dc.description.volume2021-September
dc.identifier.citationDE SOUZA, M.; BARRAUD, S.; CASSE, M.; VINET, M.; FAYNOR, O.; PAVANELLO, M. A. Experimental assessment of variability in junctionless nanowire nMOS transistors. p. 223-226, 2021.
dc.identifier.doi10.1109/ESSDERC53440.2021.9631827
dc.identifier.issn1930-8876
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4430
dc.relation.ispartofEuropean Solid-State Device Research Conference
dc.rightsAcesso Restrito
dc.subject.otherlanguageElectrical characterization
dc.subject.otherlanguageJunctionless transistor
dc.subject.otherlanguageMatching
dc.subject.otherlanguageNanowire transistor
dc.subject.otherlanguageVariability
dc.titleExperimental Assessment of Variability in Junctionless Nanowire nMOS Transistors
dc.typeArtigo de evento
fei.scopus.citations5
fei.scopus.eid2-s2.0-85123433165
fei.scopus.subjectChannel length
fei.scopus.subjectElectrical characterization
fei.scopus.subjectExperimental assessment
fei.scopus.subjectInversion modes
fei.scopus.subjectJunctionless transistors
fei.scopus.subjectMatching coefficients
fei.scopus.subjectMatchings
fei.scopus.subjectNanowire transistors
fei.scopus.subjectVariability
fei.scopus.subjectVoltage matching
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85123433165&origin=inward
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