Experimental evaluation of mismatching on the analog characteristics of GC SOI MOSFETs
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Tipo de produção
Artigo de evento
Data de publicação
2017-07-28
Texto completo (DOI)
Periódico
SBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum
Editor
Texto completo na Scopus
Citações na Scopus
1
Autores
ALVES, C. R.
Marcelo Antonio Pavanello
Michelly De Souza
FLANDRE, D.
Orientadores
ALVES, C. R.; PAVANELLO, M. A.; DE SOUZA, M. FLANDRE, D. Experimental evaluation of mismatching on the analog characteristics of GC SOI MOSFETs. In. SIMPÓSIO DE TECNOLOGIA E DISPOSITIVOS MICROELETRÔNICOS: CHIP ON THE SANDS, SBMICRO, 32., 2017, Fortaleza: SBMicro 2017 - 32º Simpósio de Tecnologia e Dispositivos Microeletrônicos: Chip on the Sands, co-localizado Simpósios: 30º SBCCI - Projeto de Circuitos e Sistemas, 2º INSCIT - Instrumentação Eletrônica, 7º WCAS - Casos de Design de IC e 17º SForum - Fórum de Estudantes de Graduação, 2017.
Resumo
This paper presents an experimental study of mismatching on the analog characteristics of fully-depleted graded-channel SOI MOSFET in comparison to uniformly doped transistors. The study is carried out using dedicated structures to account for the mismatch that have been fabricated at the same chip and with the same technology. Important basic parameters such as threshold voltage and subthreshold slope were analyzed as well as analog parameters, namely transconductance, output conductance, Early voltage and intrinsic voltage gain.
Citação
Palavras-chave
Keywords
electrical measurements; graded-channel transistor; mismatching; SOI MOSFET
Assuntos Scopus
Electrical measurement; Experimental evaluation; Graded channels; Graded-channel SOI MOSFET; Intrinsic voltage gains; mismatching; Output conductance; SOI-MOSFETs