Experimental evaluation of mismatching on the analog characteristics of GC SOI MOSFETs

dc.contributor.advisorALVES, C. R.; PAVANELLO, M. A.; DE SOUZA, M. FLANDRE, D. Experimental evaluation of mismatching on the analog characteristics of GC SOI MOSFETs. In. SIMPÓSIO DE TECNOLOGIA E DISPOSITIVOS MICROELETRÔNICOS: CHIP ON THE SANDS, SBMICRO, 32., 2017, Fortaleza: SBMicro 2017 - 32º Simpósio de Tecnologia e Dispositivos Microeletrônicos: Chip on the Sands, co-localizado Simpósios: 30º SBCCI - Projeto de Circuitos e Sistemas, 2º INSCIT - Instrumentação Eletrônica, 7º WCAS - Casos de Design de IC e 17º SForum - Fórum de Estudantes de Graduação, 2017.
dc.contributor.advisorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.contributor.authorALVES, C. R.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorMichelly De Souza
dc.contributor.authorFLANDRE, D.
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T21:57:53Z
dc.date.available2022-01-12T21:57:53Z
dc.date.issued2017-07-28
dc.description.abstractThis paper presents an experimental study of mismatching on the analog characteristics of fully-depleted graded-channel SOI MOSFET in comparison to uniformly doped transistors. The study is carried out using dedicated structures to account for the mismatch that have been fabricated at the same chip and with the same technology. Important basic parameters such as threshold voltage and subthreshold slope were analyzed as well as analog parameters, namely transconductance, output conductance, Early voltage and intrinsic voltage gain.
dc.identifier.doi10.1109/SBMicro.2017.8112992
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3824
dc.relation.ispartofSBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum
dc.rightsAcesso Restrito
dc.subject.otherlanguageelectrical measurements
dc.subject.otherlanguagegraded-channel transistor
dc.subject.otherlanguagemismatching
dc.subject.otherlanguageSOI MOSFET
dc.titleExperimental evaluation of mismatching on the analog characteristics of GC SOI MOSFETs
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-85040582744
fei.scopus.subjectElectrical measurement
fei.scopus.subjectExperimental evaluation
fei.scopus.subjectGraded channels
fei.scopus.subjectGraded-channel SOI MOSFET
fei.scopus.subjectIntrinsic voltage gains
fei.scopus.subjectmismatching
fei.scopus.subjectOutput conductance
fei.scopus.subjectSOI-MOSFETs
fei.scopus.updated2024-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85040582744&origin=inward
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