Evaluation of graded-channel SOI MOSFET operation at high temperatures

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dc.contributor.authorGaleti M.
dc.contributor.authorPavanello M.A.
dc.contributor.authorMartino J.A.
dc.date.accessioned2019-08-19T23:45:08Z
dc.date.available2019-08-19T23:45:08Z
dc.date.issued2006
dc.description.abstractThis paper presents a comparative analysis between graded-channel (GC) and conventional fully depleted SOI MOSFETs devices operating at high temperatures (up to 300 °C). The electrical characteristics such as threshold voltage and subthreshold slope were obtained experimentally and by two-dimensional numerical simulations. The results indicated that GC transistors present nearly the same behavior as the conventional SOI MOSFET devices with similar channel length. Experimental analysis of the gm/IDS ratio and Early voltage demonstrated that in GC devices the low-frequency open-loop gain is significantly improved in comparison to conventional SOI devices at room and at high-temperature due to the Early voltage increase. The multiplication factor and parasitic bipolar transistor gain obtained by two-dimensional numerical simulations allowed the analysis of the breakdown voltage, which was demonstrated to be improved in the GC as compared to conventional SOI transistors in thin silicon layer devices in the whole temperature range under analysis. © 2005 Elsevier Ltd. All rights reserved.
dc.description.firstpage601
dc.description.issuenumber7
dc.description.lastpage607
dc.description.volume37
dc.identifier.citationGALETI, Milene; PAVANELLO, Marcelo A.; MARTINO, João Antonio. Evaluation of graded-channel SOI MOSFET operation at high temperatures. Microelectronics Journal, v. 37, n. 7, p. 601-607, 2006.
dc.identifier.doi10.1016/j.mejo.2005.09.007
dc.identifier.issn0026-2692
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1066
dc.relation.ispartofMicroelectronics Journal
dc.rightsAcesso Restrito
dc.subject.otherlanguageFully depleted
dc.subject.otherlanguageGraded-channel
dc.subject.otherlanguageHigh-temperature
dc.subject.otherlanguageNew structure
dc.subject.otherlanguageSOI MOSFET
dc.titleEvaluation of graded-channel SOI MOSFET operation at high temperatures
dc.typeArtigo
fei.scopus.citations11
fei.scopus.eid2-s2.0-33747794997
fei.scopus.subjectFully depleted devices
fei.scopus.subjectGraded channel devices
fei.scopus.subjectNew structure semiconductors
fei.scopus.subjectSOI MOSFET
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33747794997&origin=inward
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