Analog operation of uniaxially strained FD SOI nMOSFETs in cryogenic temperatures

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dc.contributor.advisorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorMichelly De Souza
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.date.accessioned2022-01-12T22:05:23Z
dc.date.available2022-01-12T22:05:23Z
dc.date.issued2007-10-04
dc.description.firstpage45
dc.description.lastpage46
dc.identifier.citationDE SOUZA, M.; PAVANELLO, M. A. MARTINO, J. A.; SIMOEN, E.; CLAEYS, C.Analog operation of uniaxially strained FD SOI nMOSFETs in cryogenic temperatures. Proceedings - IEEE International SOI Conference, p. 45-46, Oct. 2007.
dc.identifier.doi10.1109/SOI.2007.4357844
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4335
dc.relation.ispartofProceedings - IEEE International SOI Conference
dc.rightsAcesso Restrito
dc.titleAnalog operation of uniaxially strained FD SOI nMOSFETs in cryogenic temperatures
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-43549110227
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=43549110227&origin=inward
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