Analysis of Capacitances in Asymmetric SelfCascode SOI nMOSFETs

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dc.contributor.authorALVES, C.R.
dc.contributor.authorD' OLIVEIRA, L. M.
dc.contributor.authorMichelly De Souza
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.date.accessioned2022-04-01T06:03:04Z
dc.date.available2022-04-01T06:03:04Z
dc.date.issued2021-08-27
dc.description.abstract©2021 IEEE.This work presents a study of the capacitance of asymmetric self-cascode silicon-on-insulator (ASC SOI) MOSFETs with similar gate areas and different gate lengths. Experimental results of total gate capacitance of different ASC are presented and complemented with the results of twodimensional simulations. The transcapacitances are explored through two-dimensional simulations. Results show that different channel lengths of the composite transistors have more influence in the depletion region of the capacitance curves for low VDS. The gate-source and gate-drain capacitances show opposite trends with the change in the lengths of source and drain transistors, despite of the VDS applied.
dc.identifier.citationALVES, C.R.; D' OLIVEIRA, L. M.; DE SOUZA, M. Analysis of Capacitances in Asymmetric SelfCascode SOI nMOSFETs. SBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices. August, 2021.
dc.identifier.doi10.1109/SBMicro50945.2021.9585730
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4459
dc.relation.ispartofSBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices
dc.rightsAcesso Restrito
dc.subject.otherlanguageAnalog performance
dc.subject.otherlanguageAsymmetric
dc.subject.otherlanguageCapacitance
dc.subject.otherlanguageMosfet
dc.subject.otherlanguageSelf-cascode
dc.subject.otherlanguageSilicon-on-insulator
dc.titleAnalysis of Capacitances in Asymmetric SelfCascode SOI nMOSFETs
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-85126146401
fei.scopus.subjectAnalog performance
fei.scopus.subjectAsymmetric
fei.scopus.subjectGate-length
fei.scopus.subjectMOS-FET
fei.scopus.subjectMOSFETs
fei.scopus.subjectnMOSFETs
fei.scopus.subjectSelf-cascode
fei.scopus.subjectSilicon on insulator
fei.scopus.subjectSilicon-on-insulator MOSFETs
fei.scopus.subjectTwo-dimensional simulations
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85126146401&origin=inward
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