Channel length influence on the performance of source-follower buffers implemented with graded-channel SOI nMOSFETs

Nenhuma Miniatura disponível
Citações na Scopus
0
Tipo de produção
Artigo de evento
Data
2008-09-04
Autores
Michelly De Souza
FLANDRE, D.
Marcelo Antonio Pavanello
Orientador
Periódico
ECS Transactions
Título da Revista
ISSN da Revista
Título de Volume
Citação
DE SOUZA, M.; FLANDRE, D.; PAVANELLO, M. A. Channel length influence on the performance of source-follower buffers implemented with graded-channel SOI nMOSFETs. ECS Transactions, v. 14, n.1, p. 263-272, Sept. 2008.
Texto completo (DOI)
Palavras-chave
Resumo
This work presents an evaluation of the influence of channel length on the performance of graded-channel (GC) SOI nMOSFETs operating as source-follower buffers. Experimental data is used to compare the buffer gain and linearity of GC and standard SOI nMOS transistors for different mask channel lengths and similar effective channel length. Two-dimensional numerical simulations were also performed, showing that the gain of buffers implemented with GC devices remains close to the theoretical limit even when short-channel devices are used. The simulated results indicate that the length of a source-follower buffer using GC devices can be reduced by a factor of 5, in comparison with the standard counterpart, without gain degradation or linearity worsening. © The Electrochemical Society.

Coleções