Channel length influence on the performance of source-follower buffers implemented with graded-channel SOI nMOSFETs

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dc.contributor.authorMichelly De Souza
dc.contributor.authorFLANDRE, D.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.date.accessioned2022-01-12T22:04:47Z
dc.date.available2022-01-12T22:04:47Z
dc.date.issued2008-09-04
dc.description.abstractThis work presents an evaluation of the influence of channel length on the performance of graded-channel (GC) SOI nMOSFETs operating as source-follower buffers. Experimental data is used to compare the buffer gain and linearity of GC and standard SOI nMOS transistors for different mask channel lengths and similar effective channel length. Two-dimensional numerical simulations were also performed, showing that the gain of buffers implemented with GC devices remains close to the theoretical limit even when short-channel devices are used. The simulated results indicate that the length of a source-follower buffer using GC devices can be reduced by a factor of 5, in comparison with the standard counterpart, without gain degradation or linearity worsening. © The Electrochemical Society.
dc.description.firstpage263
dc.description.issuenumber1
dc.description.lastpage272
dc.description.volume14
dc.identifier.citationDE SOUZA, M.; FLANDRE, D.; PAVANELLO, M. A. Channel length influence on the performance of source-follower buffers implemented with graded-channel SOI nMOSFETs. ECS Transactions, v. 14, n.1, p. 263-272, Sept. 2008.
dc.identifier.doi10.1149/1.2956040
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4295
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleChannel length influence on the performance of source-follower buffers implemented with graded-channel SOI nMOSFETs
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-57749185001
fei.scopus.subjectChannel devices
fei.scopus.subjectChannel lengths
fei.scopus.subjectEffective channel lengths
fei.scopus.subjectExperimental datums
fei.scopus.subjectGain degradations
fei.scopus.subjectNumerical simulations
fei.scopus.subjectSimulated results
fei.scopus.subjectSoi nmosfets
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=57749185001&origin=inward
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