Series resistance influence on the linear kink effect in twin-gate partially depleted SOI nMOSFETs
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2007-09-01
Autores
DER AGOPIAN, P. G.
Joao Antonio Martino
SIMOEN, E.
CLAEYS, C.
Joao Antonio Martino
SIMOEN, E.
CLAEYS, C.
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ECS Transactions
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DER AGOPIAN, P. G.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Series resistance influence on the linear kink effect in twin-gate partially depleted SOI nMOSFETs, ECS Transactions, v. 4, n. 1, p. 293-300, sept. 2007.
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This work elaborates on the influence of the series resistance on the linear kink effect (LKE) in twin-gate partially depleted (PD) Silicon-on-Insulator (SOI) nMOSFETs. The study is based on two-dimensional numerical simulations and is validated by experimental results. A relationship between the total resistance and the apparent mobility degradation factor is reported, showing that the twin-gate structure and a conventional SOI transistor with an external resistance both present a similar LKE reduction, The asymmetric behavior of the body potential with the interchange of the master and slave transistor of the twin-gate structure will be also shown. © 2006 The Electrochemical Society.