Analog characteristics of n-type vertically stacked nanowires
N/D
Tipo de produção
Artigo
Data de publicação
2021
Texto completo (DOI)
Periódico
Solid-State Electronics
Editor
Texto completo na Scopus
Citações na Scopus
3
Autores
MARINIELLO, G.
CARVALHO, C. A. B. D.
CARDOSO, PAZ, B.
BARRAUD, S.
VINET, M.
FAYNOT, O.
Marcelo Antonio Pavanello
Orientadores
Resumo
© 2021This paper presents the fundamental analog figures of merit, such as the transconductance, output conductance, transconductance over drain current ratio, intrinsic voltage gain and harmonic distortion (or non-linearity), of n-type vertically stacked nanowires with variable fin width and channel length. To have a physical insight on the results, the basic electrical parameters such as threshold voltage, subthreshold slope and low field electron mobility of the analyzed transistors were also studied. The studied analog parameters are presented in function of the transconductance over drain current, to allow for the comparison at the same inversion level.
Citação
MARINIELLO, G.; CARVALHO, C. A. B. D.; CARDOSO, PAZ, B.; BARRAUD, S.; VINET, M.; FAYNOT, O.; PAVANNELO, M. A. Analog characteristics of n-type vertically stacked nanowires. Solid-State Electronics, v. 185, nov. 2021.
Palavras-chave
Keywords
Analog; Harmonic distortion; MOSFET; Nanowire; Stacked
Assuntos Scopus
Analog figures of merits; Analog parameters; Channel length; Electrical parameter; Intrinsic voltage gains; Inversion levels; Output conductance; Subthreshold slope