3D triple-gate simulation considering the crystallographic orientations

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dc.contributor.authorCONDE, J. E.
dc.contributor.authorCERDEIRA, A.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T22:04:45Z
dc.date.available2022-01-12T22:04:45Z
dc.date.issued2008-09-04
dc.description.abstractCurrent in FinFET's transistors flows along two different crystallographic orientations, since, typically the FIN top region orientation is <100>, while the sidewalls have <110> orientation. In this paper we present how to represent the mesh structure for these devices, in order to simulate in 3-D, considering different mobility values for each orientation. Results of 3-D simulation considering also the effect of the series resistance are shown and compared with experimental results. © The Electrochemical Society.
dc.description.firstpage197
dc.description.issuenumber1
dc.description.lastpage201
dc.description.volume14
dc.identifier.citationCONDE, J. E.; CERDEIRA, A.; PAVANELLO, M. A. 3D triple-gate simulation considering the crystallographic orientations. ECS Transactions, v. 14, n. 1. p.197-201, Sept. 2008.
dc.identifier.doi10.1149/1.2956033
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4292
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.title3D triple-gate simulation considering the crystallographic orientations
dc.typeArtigo de evento
fei.scopus.citations8
fei.scopus.eid2-s2.0-57749201130
fei.scopus.subjectCrystallographic orientations
fei.scopus.subjectMesh structures
fei.scopus.subjectMobility values
fei.scopus.subjectSeries resistances
fei.scopus.subjectSide-walls
fei.scopus.updated2024-05-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=57749201130&origin=inward
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