Analysis of mismatch on the analog characteristics of GC SOI MOSFETs

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Artigo
Data
2018-12-12
Autores
ALVES, C. R.
FLANDRE, D.
Michelly De Souza
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Periódico
Journal of Integrated Circuits and Systems
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Citação
ALVES, C. R.; FLANDRE, D.; DE SOUZA, M. Analysis of mismatch on the analog characteristics of GC SOI MOSFETs. Journal of Integrated Circuits and Systems, v. 13, n. 3, p.1-8, Dec. 2018.
Texto completo (DOI)
10.29292/JICS.V13I3.16
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https://repositorio.fei.edu.br/handle/FEI/3799
Resumo
© 2018, Brazilian Microelectronics Society. All rights reserved.This paper presents an evaluation of mismatch impact on the analog characteristics of fully-depleted graded-channel (GC) SOI MOSFET. This study is carried out by means of electrical measurements and two-dimensional numerical simulations, comparing GC to uniformly doped transistors. Important basic parameters such as threshold voltage and sub-threshold slope were analyzed as well as analog parameters, namely transconductance, output conductance, Early voltage and intrinsic voltage gain.

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