Junctionless nanowire transistors operation at temperatures down to 4.2 K

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dc.contributor.authorTrevisoli R.
dc.contributor.authorDe Souza M.
dc.contributor.authorDoria R.T.
dc.contributor.authorKilchtyska V.
dc.contributor.authorFlandre D.
dc.contributor.authorPavanello M.A.
dc.date.accessioned2019-08-19T23:45:12Z
dc.date.available2019-08-19T23:45:12Z
dc.date.issued2016
dc.description.abstract© 2016 IOP Publishing Ltd.The aim of this work is to analyze the operation of junctionless nanowire transistors down to the liquid helium temperature. The drain current, the transconductance, the output conductance, the subthreshold slope, the threshold voltage and the interface trap density are the key parameters under analysis, which has been performed through experimental results together with simulated data. Oscillations in the transconductance and output conductance have been observed in the experimental results of junctionless devices for temperatures lower than 77 K. The experimental drain current curves also exhibited a 'drain threshold voltage' for the lower temperatures. The impact of the source/drain contact resistance and discrete trap levels has been analyzed by means of simulations.
dc.description.firstpage114001
dc.description.issuenumber11
dc.description.volume31
dc.identifier.citationTREVISOLI, RENAN; SOUZA, Michelly de; DORIA, Rodrigo Trevisoli; KILCHYTSKA, V.; FLANDRE, D.; Pavanello, Marcelo Antonio. Junctionless nanowire transistors operation at temperatures down to 4.2 K. Semiconductor Science and Technology (Print), v. 31, p. 114001, 2016.
dc.identifier.doi10.1088/0268-1242/31/11/114001
dc.identifier.issn1361-6641
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1119
dc.relation.ispartofSemiconductor Science and Technology
dc.rightsAcesso Restrito
dc.subject.otherlanguagedrain threshold voltage
dc.subject.otherlanguageinterface trap density
dc.subject.otherlanguagejunctionless transistors
dc.subject.otherlanguageliquid helium temperature
dc.subject.otherlanguagetransconductance oscillations
dc.titleJunctionless nanowire transistors operation at temperatures down to 4.2 K
dc.typeArtigo
fei.scopus.citations18
fei.scopus.eid2-s2.0-84993953551
fei.scopus.subjectInterface trap density
fei.scopus.subjectJunctionless devices
fei.scopus.subjectJunctionless transistors
fei.scopus.subjectLiquid helium temperature
fei.scopus.subjectLower temperatures
fei.scopus.subjectNanowire transistors
fei.scopus.subjectOutput conductance
fei.scopus.subjectSubthreshold slope
fei.scopus.updated2024-12-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84993953551&origin=inward
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