High temperature effects on harmonic distortion in submicron SOI graded-channel MOSFETs

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dc.contributor.authorEmam M.
dc.contributor.authorPavanello M.A.
dc.contributor.authorDanneville F.
dc.contributor.authorVanhoenacker-Janvier D.
dc.contributor.authorRaskin J.-P.
dc.date.accessioned2019-08-19T23:45:13Z
dc.date.available2019-08-19T23:45:13Z
dc.date.issued2011
dc.description.abstractThe effect of elevated temperature on the harmonic distortion in Graded-Channel MOSFETs is presented in this work. The Graded-Channel devices show interesting advantages in terms of nonlinear behavior compared to classical devices especially at higher temperatures up to 200°C. © (2011) Trans Tech Publications, Switzerland.
dc.description.firstpage67
dc.description.lastpage75
dc.description.volume276
dc.identifier.citationEMAM, Mostafa; PAVANELLO, M.A.; DANNEVILLE, F.; VANHOENACKER-JANVIER, D.; RASKIN, Jean Pierre. High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs. ADVANCED MATERIALS RESEARCH (ONLINE), v. 276, p. 67-75, 2011.
dc.identifier.doi10.4028/www.scientific.net/AMR.276.67
dc.identifier.issn1022-6680
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1139
dc.relation.ispartofAdvanced Materials Research
dc.rightsAcesso Restrito
dc.subject.otherlanguageDeep-submicron MOSFET
dc.subject.otherlanguageGraded-channel MOS
dc.subject.otherlanguageHarmonic distortions
dc.subject.otherlanguageHigh temperature
dc.titleHigh temperature effects on harmonic distortion in submicron SOI graded-channel MOSFETs
dc.typeArtigo
fei.scopus.citations0
fei.scopus.eid2-s2.0-79960406440
fei.scopus.subjectElevated temperature
fei.scopus.subjectGraded-channel MOS
fei.scopus.subjectHigh temperature
fei.scopus.subjectHigher temperatures
fei.scopus.subjectMOS-FET
fei.scopus.subjectMOSFETs
fei.scopus.subjectNonlinear behavior
fei.scopus.subjectSubmicron
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79960406440&origin=inward
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