Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures

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19
Tipo de produção
Artigo
Data
2014
Autores
Novo C.
Giacomini R.
Doria R.
Afzalian A.
Flandre D.
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Periódico
Semiconductor Science and Technology
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NOVO, C; Giacomini, R; DORIA, R; AFZALIAN, A; FLANDRE, D. Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures. Semiconductor Science and Technology (Print), v. 29, n. 7, p. 075008, 2014.
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This work presents a study of the illuminated to dark ratio (IDR) of lateral SOI PIN photodiodes. Measurements performed on fabricated devices show a fivefold improvement of the IDR when the devices are biased in accumulation mode and under high temperatures of operation, independently of the anode voltage. The obtained results show that the doping concentration of the intrinsic region has influence on the sensitivity of the diodes: the larger the doping concentration, the smaller the IDR. Furthermore, the photocurrent and dark current present lower values as the silicon film thickness is decreased, resulting in a further increase in the illuminated to dark ratio. © 2014 IOP Publishing Ltd.

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