Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures

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dc.contributor.authorNovo C.
dc.contributor.authorGiacomini R.
dc.contributor.authorDoria R.
dc.contributor.authorAfzalian A.
dc.contributor.authorFlandre D.
dc.date.accessioned2019-08-19T23:45:24Z
dc.date.available2019-08-19T23:45:24Z
dc.date.issued2014
dc.description.abstractThis work presents a study of the illuminated to dark ratio (IDR) of lateral SOI PIN photodiodes. Measurements performed on fabricated devices show a fivefold improvement of the IDR when the devices are biased in accumulation mode and under high temperatures of operation, independently of the anode voltage. The obtained results show that the doping concentration of the intrinsic region has influence on the sensitivity of the diodes: the larger the doping concentration, the smaller the IDR. Furthermore, the photocurrent and dark current present lower values as the silicon film thickness is decreased, resulting in a further increase in the illuminated to dark ratio. © 2014 IOP Publishing Ltd.
dc.description.firstpage075008
dc.description.issuenumber7
dc.description.volume29
dc.identifier.citationNOVO, C; Giacomini, R; DORIA, R; AFZALIAN, A; FLANDRE, D. Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures. Semiconductor Science and Technology (Print), v. 29, n. 7, p. 075008, 2014.
dc.identifier.doi10.1088/0268-1242/29/7/075008
dc.identifier.issn1361-6641
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1258
dc.relation.ispartofSemiconductor Science and Technology
dc.rightsAcesso Aberto
dc.subject.otherlanguagephotodiode
dc.subject.otherlanguageSOI
dc.subject.otherlanguagetemperature
dc.titleIlluminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures
dc.typeArtigo
fei.scopus.citations18
fei.scopus.eid2-s2.0-84902164602
fei.scopus.subjectAccumulation modes
fei.scopus.subjectAnode voltages
fei.scopus.subjectDoping concentration
fei.scopus.subjectFabricated device
fei.scopus.subjectHigh temperature
fei.scopus.subjectPin photodiode
fei.scopus.subjectSilicon film thickness
fei.scopus.subjectSOI
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84902164602&origin=inward
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