A physically-based threshold voltage definition, extraction and analytical model for junctionless nanowire transistors

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dc.contributor.authorTrevisoli R.D.
dc.contributor.authorDoria R.T.
dc.contributor.authorDe Souza M.
dc.contributor.authorPavanello M.A.
dc.date.accessioned2019-08-19T23:45:10Z
dc.date.available2019-08-19T23:45:10Z
dc.date.issued2013
dc.description.abstractThis work proposes a physically-based definition for the threshold voltage, VTH, of junctionless nanowire transistors and a methodology to extract it. The VTH is defined as the point of equal magnitude for the drift and diffusion components of the drain current. The methodology for VTH extraction uses the device transconductance over drain current ratio characteristics. An analytical model for the threshold voltage based on the same definition has also been developed. Both VTH extraction method and model have been validated through 3D simulations and have been applied to experimental devices. The proposed method has shown to provide a correct dependence on the temperature, while the double derivative of the drain current method overestimates this variation. © 2013 Elsevier Ltd. All rights reserved.
dc.description.firstpage12
dc.description.lastpage17
dc.description.volume90
dc.identifier.citationTREVISOLI, R D; DORIA, Rodrigo Trevisoli; DE SOUZA, Michelly; PAVANELLO, Marcelo A.. A physically-based threshold voltage definition, extraction and analytical model for junctionless nanowire transistors. Solid-State Electronics, v. 90, p. 12-17, 2013.
dc.identifier.doi10.1016/j.sse.2013.02.059
dc.identifier.issn0038-1101
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1096
dc.relation.ispartofSolid-State Electronics
dc.rightsAcesso Restrito
dc.subject.otherlanguageAnalytical model
dc.subject.otherlanguageJunctionless nanowire transistors
dc.subject.otherlanguageParameter extraction
dc.subject.otherlanguageThreshold voltage
dc.titleA physically-based threshold voltage definition, extraction and analytical model for junctionless nanowire transistors
dc.typeArtigo
fei.scopus.citations41
fei.scopus.eid2-s2.0-84887462939
fei.scopus.subject3D simulations
fei.scopus.subjectDiffusion components
fei.scopus.subjectExperimental devices
fei.scopus.subjectExtraction method
fei.scopus.subjectNanowire transistors
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84887462939&origin=inward
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