Global and/or local strain influence on p- and nMuGFET analog performance
N/D
Tipo de produção
Artigo de evento
Data de publicação
2011-01-05
Texto completo (DOI)
Periódico
ECS Transactions
Editor
Texto completo na Scopus
Citações na Scopus
1
Autores
AGOPIAN, P. G. D.
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
Orientadores
Resumo
In this work, the analog performance is evaluated for tri-gate p-and nMuGFETs processed with and without the implementation of different global or local strain engineering techniques. For n-channel devices, the intrinsic voltage gain showed to be worse for strained devices when the fin is narrow. Only for wider fins the voltage gain increases with the strain efficiency due to mobility enhancement. Besides the voltage gain, the transconductance, output conductance and Early Voltage are also evaluated. In spite of the smaller impact of strain engineering, pMuGFETs show better analog behavior for all studied parameters. ©The Electrochemical Society.
Citação
AGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Global and/or local strain influence on p- and nMuGFET analog performance. ECS Transactions, v. 35, n. 5, p. 145-150, 2011.
Palavras-chave
Keywords
Assuntos Scopus
Analog behavior; Analog performance; Early voltage; Local strains; Mobility enhancement; N-channel devices; Output conductance; Strain engineering; Trigate; Voltage gain