Analysis of heavy-ion particles striking regions inside and between PIN photodetectors

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dc.contributor.authorBÜHLER, Rudolf Theoderich
dc.contributor.authorPERINM, A. L.
dc.contributor.authorNOVO, C. D.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorRenato Giacomini
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-7934-9605
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-7110-7241
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1060-2649
dc.date.accessioned2022-01-12T21:58:38Z
dc.date.available2022-01-12T21:58:38Z
dc.date.issued2016-09-03
dc.description.abstract© 2016 IEEE.This paper analyses lateral PIN diodes fabricated in the IBM 0.13 technology, intended to be used in a photodetector pixel structure in future developments. Experimental electrical characterization is used to adjust numerical simulation's models that are used to evaluate the radiation analysis in PIN diodes in dark condition for heavy-ion radiation effects. Particle beam radiation, present in hazard environments, may cause circuit malfunctions due to interference in the device response. These variables impact the PIN diode performance, which are important devices to sensor applications, including those in space and nuclear facilities environments. The results pointed out the magnitude of the peak in the cathode current of a diode while the chip is struck by a particle inside the device's area, as well as in the device's neighborhood.
dc.identifier.citationBÜHLER, R. T.; PERINM, A. L.; NOVO, C. D.; GUAZZELLI, M. A.; GIACOMONI, R. Analysis of heavy-ion particles striking regions inside and between PIN photodetectors. SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum, Sept. 2017.
dc.identifier.doi10.1109/SBMicro.2016.7731365
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3875
dc.relation.ispartofSBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum
dc.rightsAcesso Restrito
dc.subject.otherlanguageHeavy-Ion
dc.subject.otherlanguagePhotodetector
dc.subject.otherlanguagePIN diode
dc.titleAnalysis of heavy-ion particles striking regions inside and between PIN photodetectors
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-85007368011
fei.scopus.subjectCathode currents
fei.scopus.subjectElectrical characterization
fei.scopus.subjectNuclear facilities
fei.scopus.subjectP-i-n photodetectors
fei.scopus.subjectPiN diode
fei.scopus.subjectPixel structure
fei.scopus.subjectRadiation analysis
fei.scopus.subjectSensor applications
fei.scopus.updated2024-09-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85007368011&origin=inward
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