Analysis of source-follower buffers implemented with graded-channel SOI nMOSFETs operating at cryogenic temperatures

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dc.contributor.authorde Souza M.
dc.contributor.authorFlandre D.
dc.contributor.authorPavanello M.A.
dc.date.accessioned2019-08-19T23:45:09Z
dc.date.available2019-08-19T23:45:09Z
dc.date.issued2009
dc.description.abstractThis work studies the operation of source-follower buffers implemented with standard and graded-channel (GC) fully depleted (FD) SOI nMOSFETs at low temperatures. The analysis is performed by comparing the voltage gain of buffers implemented with GC and standard SOI nMOS transistors considering devices with the same mask channel length and same effective channel length. It is shown that the use of GC devices allows for achieving improved gain in all inversion levels in a wide range of temperatures. In addition, this improvement increases as temperature is reduced. It is shown that GC transistors can provide virtually constant gain, while for standard devices, the gain departs from the maximum value depending on the temperature and inversion level imposed by the bias current and input voltage. Two-dimensional numerical simulations were performed in order to study the reasons for the enhanced gain of GC MOSFETs at low temperatures. © 2009 Elsevier Ltd. All rights reserved.
dc.description.firstpage599
dc.description.issuenumber11
dc.description.lastpage604
dc.description.volume49
dc.identifier.citationDE SOUZA, Michelly; FLANDRE, Denis; PAVANELLO, Marcelo A.. Analysis of Source Follower Buffers Implemented with Graded-Channel SOI nMOSFETs Operating at Cryogenic Temperatures. Cryogenics (Guildford), v. 49, n. 11, p. 599-604, 2009.
dc.identifier.doi10.1016/j.cryogenics.2008.12.010
dc.identifier.issn0011-2275
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1076
dc.relation.ispartofCryogenics
dc.rightsAcesso Restrito
dc.subject.otherlanguageA. Semiconductors
dc.subject.otherlanguageD. Cryoelectronics
dc.titleAnalysis of source-follower buffers implemented with graded-channel SOI nMOSFETs operating at cryogenic temperatures
dc.typeArtigo
fei.scopus.citations6
fei.scopus.eid2-s2.0-70350609881
fei.scopus.subjectA. Semiconductors
fei.scopus.subjectChannel length
fei.scopus.subjectConstant gain
fei.scopus.subjectCryogenic temperatures
fei.scopus.subjectD. Cryoelectronics
fei.scopus.subjectEffective channel length
fei.scopus.subjectFully depleted
fei.scopus.subjectInput voltages
fei.scopus.subjectInversion levels
fei.scopus.subjectLow temperatures
fei.scopus.subjectMaximum values
fei.scopus.subjectMOSFETs
fei.scopus.subjectNMOS transistors
fei.scopus.subjectSOI n-MOSFETs
fei.scopus.subjectTwo-dimensional numerical simulation
fei.scopus.subjectVoltage gain
fei.scopus.subjectWork study
fei.scopus.updated2024-05-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=70350609881&origin=inward
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