The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters

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dc.contributor.authorBORDALLO, C. C. M.
dc.contributor.authorTEIXEIRA, F. F.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorAGOPIAN, P. G. D.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-7110-7241
dc.date.accessioned2022-01-12T22:00:32Z
dc.date.available2022-01-12T22:00:32Z
dc.date.issued2014-09-05
dc.description.abstract© 2014 IEEE.In this work, the effect of the X-Ray radiation dose rate on n and p Triple-Gate SOI FinFET device characteristics is investigated. The threshold voltage shift, the subthreshold slope shift, the maximum transconductance and the ION/IOFF ratio were analyzed. In nMuGFETs the characteristics are always degraded due to the increase of the back conduction and for pMuGFETs, the devices have their subthreshold region characteristics improved by the decrease of back conduction. Lower dose rates of X-Ray radiation are shown to be more effective for the trapping of charges and the formation of interface traps than the use of higher doses rates.
dc.identifier.citationBORDALLO, C. C. M.; TEIXEIRA, F. F.;GUAZZELLI, M. A.; MARTINO, J. A.; AGOPIAN, P. G. D.; SIMOEN, E.; CLAEYS, C. The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters. 2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014. Sept. 2014.
dc.identifier.doi10.1109/SBMicro.2014.6940085
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4006
dc.relation.ispartof2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014
dc.rightsAcesso Restrito
dc.subject.otherlanguageBack conduction
dc.subject.otherlanguageDose rate effects
dc.subject.otherlanguageMultiple-Gate MOSFETs (MuGFETs)
dc.subject.otherlanguageX-ray radiation
dc.titleThe effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters
dc.typeArtigo de evento
fei.scopus.citations2
fei.scopus.eid2-s2.0-84912079162
fei.scopus.subjectDose-rate effects
fei.scopus.subjectInterface traps
fei.scopus.subjectMaximum transconductance
fei.scopus.subjectMultiple gate MOSFETs
fei.scopus.subjectSub-threshold regions
fei.scopus.subjectSubthreshold slope
fei.scopus.subjectThreshold voltage shifts
fei.scopus.subjectX ray radiation
fei.scopus.updated2024-08-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84912079162&origin=inward
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