The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters
dc.contributor.author | BORDALLO, C. C. M. | |
dc.contributor.author | TEIXEIRA, F. F. | |
dc.contributor.author | Marcilei Aparecida Guazzelli | |
dc.contributor.author | MARTINO, J. A. | |
dc.contributor.author | AGOPIAN, P. G. D. | |
dc.contributor.author | SIMOEN, E. | |
dc.contributor.author | CLAEYS, C. | |
dc.contributor.authorOrcid | https://orcid.org/0000-0001-7110-7241 | |
dc.date.accessioned | 2022-01-12T22:00:32Z | |
dc.date.available | 2022-01-12T22:00:32Z | |
dc.date.issued | 2014-09-05 | |
dc.description.abstract | © 2014 IEEE.In this work, the effect of the X-Ray radiation dose rate on n and p Triple-Gate SOI FinFET device characteristics is investigated. The threshold voltage shift, the subthreshold slope shift, the maximum transconductance and the ION/IOFF ratio were analyzed. In nMuGFETs the characteristics are always degraded due to the increase of the back conduction and for pMuGFETs, the devices have their subthreshold region characteristics improved by the decrease of back conduction. Lower dose rates of X-Ray radiation are shown to be more effective for the trapping of charges and the formation of interface traps than the use of higher doses rates. | |
dc.identifier.citation | BORDALLO, C. C. M.; TEIXEIRA, F. F.;GUAZZELLI, M. A.; MARTINO, J. A.; AGOPIAN, P. G. D.; SIMOEN, E.; CLAEYS, C. The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters. 2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014. Sept. 2014. | |
dc.identifier.doi | 10.1109/SBMicro.2014.6940085 | |
dc.identifier.uri | https://repositorio.fei.edu.br/handle/FEI/4006 | |
dc.relation.ispartof | 2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014 | |
dc.rights | Acesso Restrito | |
dc.subject.otherlanguage | Back conduction | |
dc.subject.otherlanguage | Dose rate effects | |
dc.subject.otherlanguage | Multiple-Gate MOSFETs (MuGFETs) | |
dc.subject.otherlanguage | X-ray radiation | |
dc.title | The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters | |
dc.type | Artigo de evento | |
fei.scopus.citations | 2 | |
fei.scopus.eid | 2-s2.0-84912079162 | |
fei.scopus.subject | Dose-rate effects | |
fei.scopus.subject | Interface traps | |
fei.scopus.subject | Maximum transconductance | |
fei.scopus.subject | Multiple gate MOSFETs | |
fei.scopus.subject | Sub-threshold regions | |
fei.scopus.subject | Subthreshold slope | |
fei.scopus.subject | Threshold voltage shifts | |
fei.scopus.subject | X ray radiation | |
fei.scopus.updated | 2024-08-01 | |
fei.scopus.url | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84912079162&origin=inward |