An accurate closed-expression model for FinFETs parasitic resistance

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dc.contributor.authorPereira A.S.N.
dc.contributor.authorGiacomini R.
dc.date.accessioned2019-08-19T23:45:14Z
dc.date.available2019-08-19T23:45:14Z
dc.date.issued2015
dc.description.abstract© 2015 Elsevier Ltd. All rights reserved.A new closed-expression analytic model for parasitic resistance of FinFETs (Fin-Field-Effect-Transistors), which allows a fast estimation of this parasitic element, is proposed and evaluated in this work. The parasitic resistance is one of the most significant parameter for performance and reliability degradations in scaled devices. The model is based in the current distribution observed in three-dimensional simulations and is very accurate when compared to experimental data. The contact resistance was modeled using a variable impedance transmission line model, to approximate source and drain geometries to the real shapes of these regions. The model has a closed expression, without adjustment parameters. All results were compared with two previous models presented in literature, and the proposed model was the one which presented the best accuracy: percent errors below 10% for different source and drain doping concentrations, contact lengths, extension lengths, contact resistivity and fin widths.
dc.description.firstpage470
dc.description.issuenumber3-4
dc.description.lastpage480
dc.description.volume55
dc.identifier.citationNASCIMENTO, A. S.;PEREIRA, A. S. N.; GIACOMINI, R.. An accurate closed-expression model for FinFETs parasitic resistance. Microelectronics and Reliability, v. 55, p. 470-480, 2015.
dc.identifier.doi10.1016/j.microrel.2015.01.006
dc.identifier.issn0026-2714
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1151
dc.relation.ispartofMicroelectronics Reliability
dc.rightsAcesso Restrito
dc.subject.otherlanguageDevice modeling
dc.subject.otherlanguageFinFET
dc.subject.otherlanguageParasitic resistance
dc.titleAn accurate closed-expression model for FinFETs parasitic resistance
dc.typeArtigo
fei.scopus.citations2
fei.scopus.eid2-s2.0-84923595613
fei.scopus.subjectContact resistivities
fei.scopus.subjectCurrent distribution
fei.scopus.subjectDevice modeling
fei.scopus.subjectFin field effect transistors
fei.scopus.subjectParasitic resistances
fei.scopus.subjectPerformance and reliabilities
fei.scopus.subjectThree dimensional simulations
fei.scopus.subjectTransmission line modeling
fei.scopus.updated2024-11-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84923595613&origin=inward
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