Radiation influence on biaxial+uniaxial strained silicon MuGFETs
N/D
Tipo de produção
Artigo de evento
Data de publicação
2013-10-11
Texto completo (DOI)
Periódico
ECS Transactions
Editor
Texto completo na Scopus
Citações na Scopus
0
Autores
BORDALLO, C.
AGOPIAN, P. G. D.
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
Orientadores
Resumo
In this work the effects of proton irradiation and mechanical stress on the off-state current of MuGFET devices are analyzed for different temperatures. Two different splits are evaluated: an unstrained and biaxial+uniaxial strained one. The off-state current grows with the stress effectiveness due to the GIDL increase and this off-current is even worse when these devices are submitted to proton irradiation due to the increase of the conduction through the back interface. The off-state current of irradiated strained devices reaches unacceptable values, in the range of 26μA at a temperature of 100°C. The temperature has a strong influence on the off-state current since it impacts on both GIDL and back interface conduction. © 2012 by The Electrochemical Society.
Citação
BORDALLO, C.; AGOPIAN, P. G. D.; MARTINO, J. A.;SIMOEN, E.; CLAEYS, C. Radiation influence on biaxial+uniaxial strained silicon MuGFETs. ECS Transactions, v. 50, n. 5, p. 205-212, Oct. 2013.
Palavras-chave
Keywords
Assuntos Scopus
IT impact; Mechanical stress; Off current; Off-state current