Radiation influence on biaxial+uniaxial strained silicon MuGFETs
Nenhuma Miniatura disponível
Citações na Scopus
0
Tipo de produção
Artigo de evento
Data
2013-10-11
Autores
BORDALLO, C.
AGOPIAN, P. G. D.
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
AGOPIAN, P. G. D.
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
Orientador
Periódico
ECS Transactions
Título da Revista
ISSN da Revista
Título de Volume
Citação
BORDALLO, C.; AGOPIAN, P. G. D.; MARTINO, J. A.;SIMOEN, E.; CLAEYS, C. Radiation influence on biaxial+uniaxial strained silicon MuGFETs. ECS Transactions, v. 50, n. 5, p. 205-212, Oct. 2013.
Texto completo (DOI)
Palavras-chave
Resumo
In this work the effects of proton irradiation and mechanical stress on the off-state current of MuGFET devices are analyzed for different temperatures. Two different splits are evaluated: an unstrained and biaxial+uniaxial strained one. The off-state current grows with the stress effectiveness due to the GIDL increase and this off-current is even worse when these devices are submitted to proton irradiation due to the increase of the conduction through the back interface. The off-state current of irradiated strained devices reaches unacceptable values, in the range of 26μA at a temperature of 100°C. The temperature has a strong influence on the off-state current since it impacts on both GIDL and back interface conduction. © 2012 by The Electrochemical Society.