Radiation influence on biaxial+uniaxial strained silicon MuGFETs

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dc.contributor.authorBORDALLO, C.
dc.contributor.authorAGOPIAN, P. G. D.
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.date.accessioned2022-01-12T22:01:58Z
dc.date.available2022-01-12T22:01:58Z
dc.date.issued2013-10-11
dc.description.abstractIn this work the effects of proton irradiation and mechanical stress on the off-state current of MuGFET devices are analyzed for different temperatures. Two different splits are evaluated: an unstrained and biaxial+uniaxial strained one. The off-state current grows with the stress effectiveness due to the GIDL increase and this off-current is even worse when these devices are submitted to proton irradiation due to the increase of the conduction through the back interface. The off-state current of irradiated strained devices reaches unacceptable values, in the range of 26μA at a temperature of 100°C. The temperature has a strong influence on the off-state current since it impacts on both GIDL and back interface conduction. © 2012 by The Electrochemical Society.
dc.description.firstpage205
dc.description.issuenumber5
dc.description.lastpage212
dc.description.volume50
dc.identifier.citationBORDALLO, C.; AGOPIAN, P. G. D.; MARTINO, J. A.;SIMOEN, E.; CLAEYS, C. Radiation influence on biaxial+uniaxial strained silicon MuGFETs. ECS Transactions, v. 50, n. 5, p. 205-212, Oct. 2013.
dc.identifier.doi10.1149/05005.0205ecst
dc.identifier.issn1938-6737
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4103
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleRadiation influence on biaxial+uniaxial strained silicon MuGFETs
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-84885762475
fei.scopus.subjectIT impact
fei.scopus.subjectMechanical stress
fei.scopus.subjectOff current
fei.scopus.subjectOff-state current
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84885762475&origin=inward
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