Junctionless nanowire transistors effective channel length extraction through capacitance characteristics
Arquivos
Tipo de produção
Artigo
Data de publicação
2023-10-05
Texto completo (DOI)
Periódico
Solid-State Electronics
Editor
Texto completo na Scopus
Citações na Scopus
2
Autores
SILVA, E. M.
TREVISOLI, R.
Rodrigo Doria
Orientadores
Resumo
© 2023 Elsevier LtdThis work aims to extract the effective channel length (LEFF) of Junctionless Nanowire Transistors (JNT) through the maximum gate capacitance of the devices. The LEFF extraction has been done by extrapolating the maximum gate capacitance as a function of the devices’ channel length (LMASK) and has shown that LEFF is around 10–15 nm longer than LMASK for devices of different channel doping concentrations.
Citação
SILVA, E. M.; TREVISOLI, R.; DORIA, R. Junctionless nanowire transistors effective channel length extraction through capacitance characteristics. Solid-State Electronics, v. 208, oct. 2023.
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Keywords
Assuntos Scopus
Capacitance characteristics; Channel dopings; Channel length; Device channel; Doping concentration; Effective channel length; Gate capacitance; Nanowire transistors