Junctionless nanowire transistors effective channel length extraction through capacitance characteristics

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2
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Artigo
Data
2023-10-05
Autores
SILVA, E. M.
TREVISOLI, R.
Rodrigo Doria
Orientador
Periódico
Solid-State Electronics
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Citação
SILVA, E. M.; TREVISOLI, R.; DORIA, R. Junctionless nanowire transistors effective channel length extraction through capacitance characteristics. Solid-State Electronics, v. 208, oct. 2023.
Texto completo (DOI)
10.1016/j.sse.2023.108734
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https://repositorio.fei.edu.br/handle/FEI/5083
Resumo
© 2023 Elsevier LtdThis work aims to extract the effective channel length (LEFF) of Junctionless Nanowire Transistors (JNT) through the maximum gate capacitance of the devices. The LEFF extraction has been done by extrapolating the maximum gate capacitance as a function of the devices’ channel length (LMASK) and has shown that LEFF is around 10–15 nm longer than LMASK for devices of different channel doping concentrations.

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