Junctionless nanowire transistors effective channel length extraction through capacitance characteristics

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dc.contributor.advisorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.contributor.authorSILVA, E. M.
dc.contributor.authorTREVISOLI, R.
dc.contributor.authorRodrigo Doria
dc.date.accessioned2023-09-01T06:03:51Z
dc.date.available2023-09-01T06:03:51Z
dc.date.issued2023-10-05
dc.description.abstract© 2023 Elsevier LtdThis work aims to extract the effective channel length (LEFF) of Junctionless Nanowire Transistors (JNT) through the maximum gate capacitance of the devices. The LEFF extraction has been done by extrapolating the maximum gate capacitance as a function of the devices’ channel length (LMASK) and has shown that LEFF is around 10–15 nm longer than LMASK for devices of different channel doping concentrations.
dc.description.volume208
dc.identifier.citationSILVA, E. M.; TREVISOLI, R.; DORIA, R. Junctionless nanowire transistors effective channel length extraction through capacitance characteristics. Solid-State Electronics, v. 208, oct. 2023.
dc.identifier.doi10.1016/j.sse.2023.108734
dc.identifier.issn0038-1101
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/5083
dc.relation.ispartofSolid-State Electronics
dc.rightsAcesso Restrito
dc.titleJunctionless nanowire transistors effective channel length extraction through capacitance characteristics
dc.typeArtigo
fei.scopus.citations2
fei.scopus.eid2-s2.0-85167401919
fei.scopus.subjectCapacitance characteristics
fei.scopus.subjectChannel dopings
fei.scopus.subjectChannel length
fei.scopus.subjectDevice channel
fei.scopus.subjectDoping concentration
fei.scopus.subjectEffective channel length
fei.scopus.subjectGate capacitance
fei.scopus.subjectNanowire transistors
fei.scopus.updated2024-11-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85167401919&origin=inward
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