Analysis of harmonic distortion of asymmetric self-cascode association of SOI nMOSFETs operating in saturation
N/D
Tipo de produção
Artigo de evento
Data de publicação
2014-01-20
Texto completo (DOI)
Periódico
2014 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2014 - Conference Proceedings
Editor
Texto completo na Scopus
Citações na Scopus
4
Autores
D'OLIVEIRA, L. M.
Rodrigo Doria
Marcelo Antonio Pavanello
Michelly De Souza
FLANDRE, D.
Orientadores
Resumo
This paper presents an experimental analysis of the harmonic distortion of asymmetric self-cascode (A-SC) association of SOI transistors. This goal is achieved by comparing the A-SC to the symmetric self-cascode (S-SC) configuration with different channel lengths. The non-linearity data have been obtained by applying the Integral Function Method to experimental measurements, for the evaluation of the total and third-order harmonic distortion. The results show that the asymmetric self-cascode provides lower total harmonic distortion than S-SC for all studied channel length associations. If a target distortion level is fixed, the A-SC enables an increase of input signal amplitude. On the other hand, smaller input signal amplitude and distortion are verified in the A-SC when fixing the output amplitude.
Citação
D'OLIVEIRA, L. M.; DORIA, R.; PAVANELLO, M. A.; DE SOUZA, M.; FLANDRE, D. Analysis of harmonic distortion of asymmetric self-cascode association of SOI nMOSFETs operating in saturation. 2014 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2014 - Conference Proceedings. Jan. 2014.
Palavras-chave
Keywords
Asymmetric Self-Cascode; Harmonic Distortion; SOI MOSFET
Assuntos Scopus
Experimental analysis; Integral function method; Self-cascode; Signal amplitude; SOI transistors; SOI-MOSFETs; Third order harmonics; Total harmonic distortion (THD)