Boosting the performance of the planar power MOSFET By using Diamond layout style
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2014-09-05
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DA SILVA, G. A.
Salvador Gimenez
Salvador Gimenez
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2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014
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DA SILVA, G. A.; GIMENEZ, S. Boosting the performance of the planar power MOSFET By using Diamond layout style. 2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014, Sept. 2014.
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© 2014 IEEE.This manuscript introduces and experimentally investigates, for the first time, the Planar Power MOSFETs implemented with Diamond (hexagonal gate geometry) Metal-Oxide-Semiconductor Field Effect Transistor with different a angles, as a basic cell, in comparison to the homologous Multifinger PPM, regarding the same gate die area and bias conditions. Using the DPPM as output current driver (switch) in digital integrated circuits applications, we can remarkably boost the PPM electrical performance in relation to the MPPM, considering the same gate area (AG) and bias conditions (BC).