Compact Analytical Model for Trap-Related Low Frequency Noise in Junctionless Transistors
N/D
Tipo de produção
Artigo de evento
Data de publicação
2019-09-26
Texto completo (DOI)
Periódico
European Solid-State Device Research Conference
Editor
Texto completo na Scopus
Citações na Scopus
4
Autores
TREVISOLI, R.
Rodrigo Doria
BARRAUD, S.
Marcelo Antonio Pavanello
Orientadores
Resumo
The aim of this work is to propose a compact analytical model for the Low Frequency Noise (LFN) in Junctionless Nanowire Transistors (JNTs). Since JNTs work differently from inversion mode transistors, the noise is also expected to behave differently. To the best of our knowledge, no analytical models have been presented for LFN in these devices. The proposed model is validated through numerical simulations. Experimental results are also used to demonstrate its applicability.
Citação
TREVISOLI, R.; DORIA, R.; BARRAUD, S.; PAVANELLO, M. A. Compact Analytical Model for Trap-Related Low Frequency Noise in Junctionless Transistors. European Solid-State Device Research Conference, p. 194-197, Sept. 2019.
Palavras-chave
Keywords
Analytical Model; Interface Traps; Low Frequency Noise; Nanowires
Assuntos Scopus
Interface traps; Inversion modes; Junctionless transistors; Low-Frequency Noise; Nanowire transistors