Charge-based continuous explicit equations for the transconductance and output conductance of submicron graded-channel SOI mosfet's

Abstract

This paper presents charge-based continuous explicit equations for the transconductance and output conductance of submicron Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFET. Short-channel effects like channel length modulation, velocity saturation and drain-induced barrier lowering have been considered in the proposed expressions. Experimental results were used to test the equations by comparing not only the transconductance and the output conductance, but also the Early voltage and the open-loop voltage gain, showing a good agreement as well as smooth transitions between the different regions of operation, validating the proposed equations. © 2006 The Electrochemical Society.