Experimental comparative study between the diamond MOSFET and its conventional counterpart in high temperatures environment
N/D
Tipo de produção
Artigo de evento
Data de publicação
2013-10-2013
Texto completo (DOI)
Periódico
2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
Editor
Texto completo na Scopus
Citações na Scopus
10
Autores
GALEMBECK, E. H. S.
RENAUZ, C.
FLANDRE, D.
Salvador Gimenez
Orientadores
Resumo
Citação
GALEMBECK, E. H. S.; RENAUZ, C.; FLANDRE, D.; GIMENEZ, S. Experimental comparative study between the diamond MOSFET and its conventional counterpart in high temperatures environment. 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013, Oct. 2013.