Analysis of Mobility in Graded-Channel SOI Transistors aiming at Circuit Simulation

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dc.contributor.authorSILVA, LUCAS MOTA BARBOSA DA
dc.contributor.authorPAZ, BRUNA CARDOSO
dc.contributor.authorMichelly De Souza
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.date.accessioned2021-11-10T21:09:23Z
dc.date.available2021-11-10T21:09:23Z
dc.date.issued2020-07-31
dc.description.abstractThis work presents an analysis of the behavior of the effective mobility of graded-channel FD SOI transistors us-ing an Y-Function-based technique. Low field mobility, linear and quadratic attenuation factors were extracted from two-di-mensional numerical simulations. The influence of the length of both channel regions over these parameters was analyzed. The parameters extracted from experimental data were used in a SPICE simulator, showing that it is possible to simulated GC SOI MOSFET using a regular SOI MOSFET model, by adjust-ing its parameters. This approach presents a percentage error smaller than 7.91% for low VDS.
dc.description.firstpage1
dc.description.issuenumber2
dc.description.lastpage5
dc.description.volume15
dc.identifier.citationSILVA, L. M. B.; PAZ, B. C.; SOUZA, M. DE. Analysis of mobility in graded-channel SOI transistors aiming at circuit simulation. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 15, n. 2, p. 1-5, 2020.
dc.identifier.doi10.29292/jics.v15i2.188
dc.identifier.issn1807-1953
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3455
dc.relation.ispartofJICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS)
dc.rightsAcesso Aberto
dc.rights.licenseCreative Commons "Este é um artigo publicado em acesso aberto sob uma licença Creative Commons (CC BY-NC-ND 4.0). Fonte: https://jics.org.br/ojs/index.php/JICS/article/view/188. Acesso em: 11 nov. 2021.
dc.subjectY-Function
dc.subjectGraded-Channel transistors
dc.subjectSOI
dc.subjectEffective mobility
dc.subjectSPICE simulation
dc.titleAnalysis of Mobility in Graded-Channel SOI Transistors aiming at Circuit Simulationpt_BR
dc.typeArtigopt_BR
fei.scopus.citations1
fei.scopus.eid2-s2.0-85093883226
fei.scopus.updated2024-03-04
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