Boosting the MOSFETs matching by using diamond layout style

Página do item simplificado
dc.contributor.authorPERUZZI, V. V.
dc.contributor.authorRENAUX, C.
dc.contributor.authorFLANDRE, D.
dc.contributor.authorSalvador Gimenez
dc.date.accessioned2023-08-26T23:48:11Z
dc.date.available2023-08-26T23:48:11Z
dc.date.issued2017-04-05
dc.description.abstract© 2017, Brazilian Microelectronics Society. All rights reserved.This manuscript presents an experimental comparative study between the Metal-Oxide-Semiconductor (MOS) Silicon-On-Insulator (SOI) Field Effect Transistors, n-type, (nMOSFETs) matching, which are implemented with the hexagonal gate shape (Diamond) and standard rectangular ones. The main analog parameters and figures of merit of 360 devices are investigated. The results establish that the Diamond SOI MOSFETs with α angles equal to 90o can boost in more than in average -45.8% with a standard deviation of 20.1% the devices matching in comparison to those found with the typical rectangular SOI MOSFETs, concerning the same gate area and bias conditions. Consequently, the Diamond layout style is an alternative technique to reduce the nMOSFETs’ mismatching, considering the analog SOI Complementary MOS (CMOS) integrated circuits (ICs) applications.
dc.description.firstpage33
dc.description.issuenumber1
dc.description.lastpage41
dc.description.volume12
dc.identifier.citationPERUZZI, V. V.; RENAUX, C.; FLANDRE, D.; GIMENEZ, S. Boosting the MOSFETs matching by using diamond layout style. Journal of Integrated Circuits and Systems, v. 12, n. 1, p. 33-41, apr. 2017.
dc.identifier.issn1872-0234
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4894
dc.relation.ispartofJournal of Integrated Circuits and Systems
dc.rightsAcesso Restrito
dc.subject.otherlanguageDevices Matching
dc.subject.otherlanguageSOI nMOSFET and analog SOI CMOS ICs
dc.titleBoosting the MOSFETs matching by using diamond layout style
dc.typeArtigo
fei.scopus.citations0
fei.scopus.eid2-s2.0-85037037959
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85037037959&origin=inward
Arquivos
Coleções
Artigo de evento