Characterization of thin-film SOI PIN diodes from cryogenic to above room temperatures using an explicit I-V multi-branch model

dc.contributor.advisorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.contributor.authorLUGO-MUNOZ, D.
dc.contributor.authorMUCI, J.
dc.contributor.authorORTIZ-CONDE, A.
dc.contributor.authorGARCIA-SANCHEZ, F. J.
dc.contributor.authorMichelly De Souza
dc.contributor.authorFLANDRE, D.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T22:03:10Z
dc.date.available2022-01-12T22:03:10Z
dc.date.issued2011-09-02
dc.description.abstractA multi-branch model is proposed to describe multiple conduction mechanisms in thin-film SOI PIN diodes with parasitic series resistance over a wide operating temperature range, from 90 to 390 K. The model is composed of the parallel combination of three branches, each of them incorporating a diode and a series resistance. The model's unique advantage is its explicit nature which allows the terminal current to be continuously expressed as an explicit analytical function of the applied terminal voltage. The resulting explicit equation is convenient for repetitive simulation applications as well as for analytic differentiation and integration, in contrast to conventional models which only allow numerical solutions. The model's suitability has been assessed by parameter extraction and subsequent playback on real SOI PIN diode forward I-V characteristics. ©The Electrochemical Society.
dc.description.firstpage171
dc.description.issuenumber1
dc.description.lastpage178
dc.description.volume39
dc.identifier.citationLUGO-MUNOZ, D.; MUCI, J.; ORTIZ-CONDE, A.; GARCIA-SANCHEZ, F. J.; DE SOUZA, M.; FLANDRE, D.; PAVANELLO, M. A. Characterization of thin-film SOI PIN diodes from cryogenic to above room temperatures using an explicit I-V multi-branch model. ECS Transactions, v. 39, n. 1, p.171-178, Sept. 2011.
dc.identifier.doi10.1149/1.3615191
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4185
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleCharacterization of thin-film SOI PIN diodes from cryogenic to above room temperatures using an explicit I-V multi-branch model
dc.typeArtigo de evento
fei.scopus.citations3
fei.scopus.eid2-s2.0-84856943440
fei.scopus.subjectAnalytical functions
fei.scopus.subjectConduction Mechanism
fei.scopus.subjectConventional models
fei.scopus.subjectExplicit equations
fei.scopus.subjectIV characteristics
fei.scopus.subjectNumerical solution
fei.scopus.subjectOperating temperature
fei.scopus.subjectParallel combination
fei.scopus.subjectParasitic series resistance
fei.scopus.subjectPiN diode
fei.scopus.subjectRoom temperature
fei.scopus.subjectSeries resistances
fei.scopus.subjectSimulation applications
fei.scopus.subjectTerminal currents
fei.scopus.subjectTerminal voltages
fei.scopus.subjectThree-branch
fei.scopus.updated2024-05-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84856943440&origin=inward
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