Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETS at low temperatures
Nenhuma Miniatura disponível
Citações na Scopus
1
Tipo de produção
Artigo de evento
Data
2004-09-11
Autores
Marcelo Antonio Pavanello
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
Orientador
Periódico
Proceedings - Electrochemical Society
Título da Revista
ISSN da Revista
Título de Volume
Citação
PAVANELLO, M. A.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETS at low temperatures. Proceedings - Electrochemical Society, v. 3, p. 21-26, sept. 2023.
Texto completo (DOI)
Palavras-chave
Resumo
The use of partially depleted deep-submicrometer SOI nMOSFETs in mixed mode applications is discussed in terms of channel engineering and temperature of operation. It is shown that the halo implantation used to obtain better digital characteristics degrades the gain and the unity gain frequency in comparison to devices that are not subjected to this implantation.