Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETS at low temperatures

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dc.contributor.advisorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.date.accessioned2023-08-26T23:50:51Z
dc.date.available2023-08-26T23:50:51Z
dc.date.issued2004-09-11
dc.description.abstractThe use of partially depleted deep-submicrometer SOI nMOSFETs in mixed mode applications is discussed in terms of channel engineering and temperature of operation. It is shown that the halo implantation used to obtain better digital characteristics degrades the gain and the unity gain frequency in comparison to devices that are not subjected to this implantation.
dc.description.firstpage21
dc.description.lastpage26
dc.description.volume3
dc.identifier.citationPAVANELLO, M. A.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETS at low temperatures. Proceedings - Electrochemical Society, v. 3, p. 21-26, sept. 2023.
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/5061
dc.relation.ispartofProceedings - Electrochemical Society
dc.rightsAcesso Restrito
dc.titleEvaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETS at low temperatures
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-17044433879
fei.scopus.subjectChannel engineering
fei.scopus.subjectHigh-frequency systems
fei.scopus.subjectLinearity
fei.scopus.subjectScaling problems
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=17044433879&origin=inward
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