Physical insights on the dynamic response of junctionless nanowire transistors
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2016-11-02
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Rodrigo Doria
TREVISOLI, R.
Michelly De Souza
Marcelo Antonio Pavanello
TREVISOLI, R.
Michelly De Souza
Marcelo Antonio Pavanello
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SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum
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DORIA, R.; TREVISOLI, R.; DE SOUZA, M.; PAVANELLO, M. A. Physical insights on the dynamic response of junctionless nanowire transistors. SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum, Nov, 2016.
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The aim of this work is to present, for the first time, an analysis of the maximum oscillation frequency (fmax) presented by Junctionless Nanowire Transistors (JNTs) as well as its impact and the carriers transit time on the minimum switching time of these devices. It has been observed that despite presenting lower fmax than inversion mode devices, fmax of JNTs is benefited by its lower capacitances along a large interval in its operation range. Also, it has been shown that the transit time can significantly influence on the minimum switching time of long devices, since it can be larger than the minimum oscillation time, what does not occur in shorter JNTs.