Field effect transistors: From mosfet to Tunnel-Fet analog performance perspective
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2014-10-31
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MARTINO, J. A.
AGOPIAN, P. G. D.
SIMOEN, E.
CLAEYS, C.
AGOPIAN, P. G. D.
SIMOEN, E.
CLAEYS, C.
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Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
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MARTINO, J. A.; AGOPIAN, P. G. D.; SIMOEN, E.; CLAEYS, C. Field effect transistors: From mosfet to Tunnel-Fet analog performance perspective. Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Oct. 2014.
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© 2014 IEEE.This paper will discuss the analog behavior of the main insulated gate field effect transistor (FET) roadmap, like Silicon-On-Insulator (SOI) MOSFET, Graded-Channel (GC) SOI MOSFET, triple-gate SOI FinFET and Tunnel-FET (TFET) devices. The main analog Figures of Merit (FoM) like transconductance over drain current ratio, Early voltage, intrinsic voltage gain and unit gain frequency will be analyzed.