Experimental analysis of self-heating effects using the pulsed IV method in junctionless nanowire transistors
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2018-08-27
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BERGAMASHI, F. E.
MARINIELLO, G.
BARRAUD, S.
Marcelo Antonio Pavanello
MARINIELLO, G.
BARRAUD, S.
Marcelo Antonio Pavanello
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33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018
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BERGAMASHI, F. E.; MARINIELLO, G.; BARRAUD, S.; PAVANELLO, M. A. Experimental analysis of self-heating effects using the pulsed IV method in junctionless nanowire transistors. 33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018.
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This paper discusses the occurrence of self-heating in Junctionless Nanowire Transistors, observed through drain current degradation in the transient regime. The analysis is made by performing experimental measurements using the Pulsed IV method in transistors with varied dimensions. It is shown that the junctionless nanowire's susceptibility to self-heating is not high enough to significantly affect the transistor's characteristics, where for all cases current degradation lower than 4.5% is seen.