Experimental analysis of self-heating effects using the pulsed IV method in junctionless nanowire transistors

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dc.contributor.authorBERGAMASHI, F. E.
dc.contributor.authorMARINIELLO, G.
dc.contributor.authorBARRAUD, S.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T21:57:02Z
dc.date.available2022-01-12T21:57:02Z
dc.date.issued2018-08-27
dc.description.abstractThis paper discusses the occurrence of self-heating in Junctionless Nanowire Transistors, observed through drain current degradation in the transient regime. The analysis is made by performing experimental measurements using the Pulsed IV method in transistors with varied dimensions. It is shown that the junctionless nanowire's susceptibility to self-heating is not high enough to significantly affect the transistor's characteristics, where for all cases current degradation lower than 4.5% is seen.
dc.identifier.citationBERGAMASHI, F. E.; MARINIELLO, G.; BARRAUD, S.; PAVANELLO, M. A. Experimental analysis of self-heating effects using the pulsed IV method in junctionless nanowire transistors. 33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018.
dc.identifier.doi10.1109/SBMicro.2018.8511475
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3765
dc.relation.ispartof33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018
dc.rightsAcesso Restrito
dc.subject.otherlanguageJunctionless nanowire transistors
dc.subject.otherlanguagePulsed measurements
dc.subject.otherlanguageSelf-heating effects
dc.titleExperimental analysis of self-heating effects using the pulsed IV method in junctionless nanowire transistors
dc.typeArtigo de evento
fei.scopus.citations4
fei.scopus.eid2-s2.0-85057415295
fei.scopus.subjectCurrent degradation
fei.scopus.subjectExperimental analysis
fei.scopus.subjectI-V method
fei.scopus.subjectNanowire transistors
fei.scopus.subjectPulsed measurements
fei.scopus.subjectSelf-heating
fei.scopus.subjectSelf-heating effect
fei.scopus.subjectTransient regime
fei.scopus.updated2024-08-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85057415295&origin=inward
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