Underestimation of measured self-heating in nanowires by using gate resistance technique

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dc.contributor.authorMARINIELLO, G.
dc.contributor.authorCASSE, M.
dc.contributor.authorREIMBOLD, G.
dc.contributor.authorMarcelo Antonio Pavanello
dc.date.accessioned2022-10-01T06:05:31Z
dc.date.available2022-10-01T06:05:31Z
dc.date.issued2016-11-05
dc.description.abstract© The Institution of Engineering and Technology 2016.The channel temperature rise is demonstrated due to self-heating in narrow tri-gate fully depleted silicon-on-insulator devices becomes inaccurate when extracted using the gate resistance thermometry. Thermal resistance and channel temperature have been extracted by both gate resistance measurements and 3D TCAD electrothermal simulations for tri-gate wide and nanowire MOSFETs down to 12.5 nm fin width. A critical fin width around 500 nm the extracted channel temperature accessed by the gate resistance thermometry differs significantly from the actual channel temperature due to heat dissipation through the gate contacts is shown below, leading to significantly underestimated values.
dc.description.firstpage1935
dc.description.issuenumber23
dc.description.lastpage1937
dc.description.volume52
dc.identifier.citationMARINIELLO, G.; CASSE, M.; REIMBOLD, G.; PAVANELLO, M. A. Underestimation of measured self-heating in nanowires by using gate resistance technique. Electronics Letters, v. 52, n. 23, p. 1935-1937, Nov. 2016.
dc.identifier.doi10.1049/EL.2016.2570
dc.identifier.issn0013-5194
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4597
dc.relation.ispartofElectronics Letters
dc.rightsAcesso Restrito
dc.titleUnderestimation of measured self-heating in nanowires by using gate resistance technique
dc.typeArtigo
fei.scopus.citations6
fei.scopus.eid2-s2.0-85040603737
fei.scopus.subjectChannel temperature
fei.scopus.subjectFin widths
fei.scopus.subjectFully depleted silicon-on-insulator
fei.scopus.subjectGate resistance
fei.scopus.subjectResistance technique
fei.scopus.subjectResistance thermometry
fei.scopus.subjectSelf-heating
fei.scopus.subjectSilicon-on-insulator devices
fei.scopus.subjectTemperature rise
fei.scopus.subjectTrigate
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85040603737&origin=inward
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