Ultra-Low-Power Diodes Composed by SOI UTBB Transistors

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2022-07-04
Autores
COSTA, F. J.
TREVISOLI, R.
Rodrigo Doria
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2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
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COSTA, F. J.; TREVISOLI, R.; DORIA, R. Ultra-Low-Power Diodes Composed by SOI UTBB Transistors. 2022 IEEE Latin America Electron Devices Conference, LAEDC 2022, Jul. 2022.
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© 2022 IEEE.The main objective of this work is to present an analysis of the performance of Ultra-Thin-Body and Buried Oxide transistors working as Ultra-Low-Power diodes. The implementation of different ground planes and substrate biases are analyzed. It is shown a reduced leakage current and increased ratio between the on and off-state currents for the Ultra-Low-Power diode with the N-substrate biased at -2V. However, this condition results in increased threshold voltage. The ground planes do not provoke a significant change in the leakage current, but a noticeable variation can be observed in the ratio between the on and off-state currents due to the higher threshold voltage in relation to the system without ground plane.

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